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Power outage at Samsung's plant damages 3.5% of global NAND flash output

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Power outage at Samsung's plant damages 3.5% of global NAND flash output

A 30-minute power outage at South Korea-based Samsung Electronics Co. Ltd.'s fabrication plant disrupted production and damaged up to 3.5% of the global NAND (negative-AND) flash memory supply for March, AnandTech reported citing sources. The amount represents 11% of the conglomerate's monthly output. The outage, which occurred at Samsung's plant near Pyeongtaek on March 9, damaged up to 60,000 processed wafers with V-NAND flash memory. The disruption is likely to have an effect on the global output of non-volatile memory.

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